Nanowerk (July 25) -- Researchers, led by ECE professor Xiuling Li, have developed a way to etch very tall, narrow finFETs, a type of transistor that forms a tall semiconductor “fin” for the current to travel over. The etching technique addresses many problems in trying to create 3-D devices, typically done now by stacking layers or carving out structures from a thicker semiconductor wafer. Also: ScienceBlog (July 25), Electronics Weekly (July 26), Science Daily (July 26), AZoMaterials (July 27), Science Codex (July 26).