GaN-on-Silicon transistors

Phys.Org (Jan. 9) -- A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. Working with industry partners Veeco and IBM, the team created the high electron mobility transistor (HEMT) structure on a 200 mm silicon substrate with a process that will scale to larger industry-standard wafer sizes. Also: Science Daily (Jan. 9), ScienceBlog (Jan. 9), Daily ME (Jan. 9), Wireless Design Online (Jan. 9), AZoM (Jan. 10), CompoundSemiconductor Online (Jan. 11), Semiconductor Today (Jan. 10), R&D Magazine (Jan. 10), Compound Semiconductor (Jan. 10), Solid State Technology (Jan. 10), Azo Materials (Jan. 10), ChemEurope.com (Jan. 11), Nanotechnology Now (Jan. 10).