Tak H. Ning

To Tak Ning for his pioneering develpment of advanced bipolar an metal oxide semiconductor field effect transitor (MOSFET) devices and for his seminal contributions to the understanding of hot-electron effects n metal oxide semiconductor devices.

IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York

  • BA, 1967, Physics, Reed College
  • MS, 1968, Physics, University of Illinois at Urbana-Champaign
  • PhD, 1971, Physics, University of Illinois at Urbana-Champaign

Tak Ning is an outstanding leader in an increasingly technological society. He began his career as an assistant professor in the Department Electrical and Computer Engineering at UIUC, where he did innovative research on electron transport in metal-oxide semiconductor (MOS) surface inversion layer. In 1973, he joined the IBM Research Division, where he has led increasingly complex and pioneering projects key to the development of IBM's semiconductor technology and products. Major accomplishments include the development and application of the micron and submicron bipolar, complementary metal oxide semiconductor (CMOS), bipolar complementary metal oxide semicondutor (BiCMOS), and dynamic random access memory (DRAM) technologies. He is the author or coauthor of more than 100 technical publications and, with Yaun Taur, author of the book Fundamentals of Modern VLSI Devices.

Ning is the inventor or coinventor of 21 U.S. patents, including the widely used DRAM cell and the self-aligned bipolar transistor. He is a member of the national Academy of Engineering and a fellow of  the Institute of Electrical and Electronics Engineers (IEEE) and of the American Physical Society. He has been an IBM  fellow since 1991. From IEEE, he received the Jack A. Morton Award (with H. N. Yu) in 1991, the J. J. Ebers Award in 1989 and the BJT 50th Anniversary Award in 1997. He also received the 1998 Outstanding Research Award from Pan Wen-Yuan Foundation in Taiwan.

He has served on and led many committees for IEEE, was a member of the Physical Sciences Panel for the National Research Council, and was an associate editor for IEEE Transactions of Electron Devices.

Current as of 2000.